Multi-level forming-free HfO₂-based ReRAM for energy-efficient computing (2024)

Hua, E., Abunahla, H., Gaydadjiev, G., Hamdioui, S. (2024). Multi-level forming-free HfO2-based ReRAM for energy-efficient computing. In DRC 2024 - 82nd Device Research Conference (Device Research Conference - Conference Digest, DRC). IEEE. https://doi.org/10.1109/DRC61706.2024.10605282

Hua, Erbing ; Abunahla, Heba ; Gaydadjiev, Georgi et al. / Multi-level forming-free HfO2-based ReRAM for energy-efficient computing. DRC 2024 - 82nd Device Research Conference. IEEE, 2024. (Device Research Conference - Conference Digest, DRC).

@inproceedings{86b57ac549c74795be11b36eddb490c0,

title = "Multi-level forming-free HfO2-based ReRAM for energy-efficient computing",

abstract = "Memristor technology has shown great promise for energy-efficient computing [1] , though it is still facing many challenges [1 , 2]. For instance, the required additional costly electroforming to establish conductive pathways is seen as a significant drawback as it contributes to power and area overheads, and limited device endurance. In this work, we propose a novel forming-free HfO2 -based ReRAM device with low operating voltages , multi-level capability , and less sensitivity to device-to-device (D2D) and cycle-to-cycle (C2C) variations. The device is fabricated using CMOS-compatible processes, excluding the undesirable complex steps mandatory to manufacture the state-of-the-art forming-free devices [3, 4, 5]. This is accomplished by utilizing the desirable formation energy of Pd-O bonds [6, 7], which creates conducting paths at room temperature while maintaining the analog switching ability of the devices. The proposed ReRAM device holds a great value for dense memories and energy-efficient compute architectures.",

author = "Erbing Hua and Heba Abunahla and Georgi Gaydadjiev and Said Hamdioui and Ryoichi Ishihara",

note = "Green Open Access added to TU Delft Institutional Repository {\textquoteleft}You share, we take care!{\textquoteright} – Taverne project https://www.openaccess.nl/en/you-share-we-take-care Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public. ; 82nd Device Research Conference, DRC 2024 ; Conference date: 24-06-2024 Through 26-06-2024",

year = "2024",

doi = "10.1109/DRC61706.2024.10605282",

language = "English",

series = "Device Research Conference - Conference Digest, DRC",

publisher = "IEEE",

booktitle = "DRC 2024 - 82nd Device Research Conference",

address = "United States",

}

Hua, E, Abunahla, H, Gaydadjiev, G, Hamdioui, S 2024, Multi-level forming-free HfO2-based ReRAM for energy-efficient computing. in DRC 2024 - 82nd Device Research Conference. Device Research Conference - Conference Digest, DRC, IEEE, 82nd Device Research Conference, DRC 2024, College Park, United States, 24/06/24. https://doi.org/10.1109/DRC61706.2024.10605282

Multi-level forming-free HfO2-based ReRAM for energy-efficient computing. / Hua, Erbing; Abunahla, Heba; Gaydadjiev, Georgi et al.
DRC 2024 - 82nd Device Research Conference. IEEE, 2024. (Device Research Conference - Conference Digest, DRC).

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

TY - GEN

T1 - Multi-level forming-free HfO2-based ReRAM for energy-efficient computing

AU - Hua, Erbing

AU - Abunahla, Heba

AU - Gaydadjiev, Georgi

AU - Hamdioui, Said

AU - Ishihara, Ryoichi

N1 - Green Open Access added to TU Delft Institutional Repository ‘You share, we take care!’ – Taverne project https://www.openaccess.nl/en/you-share-we-take-care Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.

PY - 2024

Y1 - 2024

N2 - Memristor technology has shown great promise for energy-efficient computing [1] , though it is still facing many challenges [1 , 2]. For instance, the required additional costly electroforming to establish conductive pathways is seen as a significant drawback as it contributes to power and area overheads, and limited device endurance. In this work, we propose a novel forming-free HfO2 -based ReRAM device with low operating voltages , multi-level capability , and less sensitivity to device-to-device (D2D) and cycle-to-cycle (C2C) variations. The device is fabricated using CMOS-compatible processes, excluding the undesirable complex steps mandatory to manufacture the state-of-the-art forming-free devices [3, 4, 5]. This is accomplished by utilizing the desirable formation energy of Pd-O bonds [6, 7], which creates conducting paths at room temperature while maintaining the analog switching ability of the devices. The proposed ReRAM device holds a great value for dense memories and energy-efficient compute architectures.

AB - Memristor technology has shown great promise for energy-efficient computing [1] , though it is still facing many challenges [1 , 2]. For instance, the required additional costly electroforming to establish conductive pathways is seen as a significant drawback as it contributes to power and area overheads, and limited device endurance. In this work, we propose a novel forming-free HfO2 -based ReRAM device with low operating voltages , multi-level capability , and less sensitivity to device-to-device (D2D) and cycle-to-cycle (C2C) variations. The device is fabricated using CMOS-compatible processes, excluding the undesirable complex steps mandatory to manufacture the state-of-the-art forming-free devices [3, 4, 5]. This is accomplished by utilizing the desirable formation energy of Pd-O bonds [6, 7], which creates conducting paths at room temperature while maintaining the analog switching ability of the devices. The proposed ReRAM device holds a great value for dense memories and energy-efficient compute architectures.

UR - http://www.scopus.com/inward/record.url?scp=85201048865&partnerID=8YFLogxK

U2 - 10.1109/DRC61706.2024.10605282

DO - 10.1109/DRC61706.2024.10605282

M3 - Conference contribution

AN - SCOPUS:85201048865

T3 - Device Research Conference - Conference Digest, DRC

BT - DRC 2024 - 82nd Device Research Conference

PB - IEEE

T2 - 82nd Device Research Conference, DRC 2024

Y2 - 24 June 2024 through 26 June 2024

ER -

Hua E, Abunahla H, Gaydadjiev G, Hamdioui S, Ishihara R. Multi-level forming-free HfO2-based ReRAM for energy-efficient computing. In DRC 2024 - 82nd Device Research Conference. IEEE. 2024. (Device Research Conference - Conference Digest, DRC). doi: 10.1109/DRC61706.2024.10605282